Very High Frequency De-coupled RIE enables independent ion density and energy control for effective process control knobs

Symmetrically distributed and direct RF feed for VHF RF enables precise control for repeatable results in a production environment

Proprietary, plasma confinement enables process stability with high flow conductance for a wide process window

Independent RF onboard uniformity control unit and endpoint control per station enables each wafer to run in a single-chamber environment

Bottom-powered, high-frequency RF enables stable, low pressure, high plasma density strip to preserve the integrity of low-k materials

Proprietary, self-isolated RF match for quick, repeatable frequency-tuning capability

High-purity, plasma-resistant chamber materials for very low defectivity and low cost of consumables

Direct resistive top electrode heating with closed-loop control enables precise and speedy temperature control for consistent wafer processing

Mini-batch cluster architecture – featuring up to six single-wafer process stations delivers excellent throughput in a smaller footprint

Modular system architecture facilitates easy installation and maintenance

For more information on the Primo D-RIE, please email info@amecnsh.com